 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| january 2000 ? 2000 fairchild semiconductor corporation fdt434p rev. c1 (w) fdt434p p-channel 2.5v specified powertrench ? ? ? ? mosfet general description this p-channel 2.5v specified mosfet is produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. applications ? low dropout regulator ? dc/dc converter ? load switch ? motor driving features ? ?5.5 a, ?20 v. r ds(on) = 0.050 ? @ v gs = ?4.5 v r ds(on) = 0.070 ? @ v gs = ?2.5 v. ? low gate charge (13nc typical) ? high performance trench technology for extremely low r ds(on) . ? high power and current handling capability in a widely used surface mount package. g d s d sot-22 3 s g d d g d s sot-22 3 * (j23z) s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ?6 a ? pulsed ?30 power dissipation for single operation (note 1a) 3 (note 1b) 1.3 p d (note 1c) 1.1 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 42 c/w r jc thermal resistance, junction-to-case (note 1) 12 c/w package marking and ordering information device marking device reel size tape width quantity 434 fdt434p 13?? 12mm 2500 units fdt434p
fdt434p rev. c1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?28 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage current, reverse v gs = ?8 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.6 ?1 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 2 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?6 a v gs = ?2.5 v, i d = ?4 a v gs = ?4.5 v, i d = ?6 a t j =125 c 0.040 0.050 0.067 0.050 0.070 0.083 ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?10 v, i d = ?6 a 6.5 s dynamic characteristics c iss input capacitance 1187 pf c oss output capacitance 270 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 114 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 15 25 ns t d(off) turn?off delay time 45 65 ns t f turn?off fall time v dd = ?5 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 30 50 ns q g total gate charge 13 19 nc q gs gate?source charge 1.8 nc q gd gate?drain charge v ds = ?10 v, i d = ?6 a, v gs = ?4.5 v 3 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?2.5 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?2.5 a (note 2) ?0.75 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 42c/w when mounted on a 1in 2 pad of 2 oz copper b) 95/w when mounted on a .0066 in 2 pad of 2 oz copper c) 110/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fdt434p fdt434p rev. c1 (w) typical characteristics 0 4 8 12 16 20 012345 -v ds , drain-source voltage (v) -i d , drain current (a) -3.0v -1.5 v -2.5v -2.0v v gs = -4.5v 0 5 10 15 20 0.8 1 1.2 1.4 1.6 1.8 - i , drain current (a) drain-source on-resistance v = -2.5v gs d r , normalized ds(on) -4.5v -3.0v -4.0v -3.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance v = - 4.5v gs i = - 6 a d r , normalized ds(on) j 12345 0 0.03 0.06 0.09 0.12 0.15 - v , gate to source voltage (v) drain-source on-resistance gs r ds(on) 25c t =125c a i = -6 a d figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 6 9 12 15 -v , gate to source voltage (v) - i , drain current (a) v = -5v ds gs d t = -55c j 125c 25c 00.20.40.60.811.21.4 0.001 0.01 0.1 1 15 -v , body diode forward voltage (v) - i , reverse drain current (a) 25c -55c v = 0v gs sd s t = 125c j figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdt434p fdt434p rev. c1 (w) typical characteristics 0 3 6 9 12 15 0 1 2 3 4 5 q , gate charge (nc) -v , gate-source voltage (v) g gs v = -5v ds -10v i = -6.0a d -15v 0 200 400 600 800 1000 1200 1400 1600 1800 024681012 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) v gs = -4.5v single pulse r ja = 110 o c/w t a = 25 o c r ds(on) limit dc 1s 10s 100ms 10ms 100 s 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja = 110 o c/w t a = 25 o c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 110 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fdt434p !"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ ! " ! #$ ! $ % $& ' ( ) !! *! * + ,$ " ! % - $ " ./ " .0 " .1 2 2 , " $! $ 8$%-' 3% 3 $ 45 |
Price & Availability of FDT434PNL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |